RQ3E080BNTB vs RQ3E080BN vs RQ3E080BNFU7TB

 
PartNumberRQ3E080BNTBRQ3E080BNRQ3E080BNFU7TB
DescriptionMOSFET 4.5V Drive Nch MOSFET
ManufacturerROHM Semiconductor--
Product CategoryMOSFET--
RoHSY--
TechnologySi--
Mounting StyleSMD/SMT--
Package / CaseHSMT-8--
Number of Channels1 Channel--
Transistor PolarityN-Channel--
Vds Drain Source Breakdown Voltage30 V--
Id Continuous Drain Current8 A--
Rds On Drain Source Resistance11 mOhms--
Vgs th Gate Source Threshold Voltage2.5 V--
Vgs Gate Source Voltage20 V--
Qg Gate Charge14.5 nC--
Pd Power Dissipation2 W--
ConfigurationSingle--
PackagingReel--
Transistor Type1 N-channel--
BrandROHM Semiconductor--
Fall Time7 ns--
Product TypeMOSFET--
Rise Time20 ns--
Factory Pack Quantity3000--
SubcategoryMOSFETs--
Part # AliasesRQ3E080BN--
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