RS1E170GNTB vs RS1E170GN vs RS1E170GNFU7TB

 
PartNumberRS1E170GNTBRS1E170GNRS1E170GNFU7TB
DescriptionMOSFET 4.5V Drive Nch MOSFET
ManufacturerROHM Semiconductor--
Product CategoryMOSFET--
RoHSY--
TechnologySi--
Mounting StyleSMD/SMT--
Package / CaseHSOP-8--
Number of Channels1 Channel--
Transistor PolarityN-Channel--
Vds Drain Source Breakdown Voltage30 V--
Id Continuous Drain Current17 A--
Rds On Drain Source Resistance6.7 mOhms--
Vgs th Gate Source Threshold Voltage2.5 V--
Vgs Gate Source Voltage20 V--
Qg Gate Charge12 nC--
Minimum Operating Temperature- 55 C--
Maximum Operating Temperature+ 150 C--
Pd Power Dissipation3 W--
ConfigurationSingle--
PackagingReel--
Transistor Type1 N-Channel--
BrandROHM Semiconductor--
Forward Transconductance Min13 S--
Fall Time3.7 ns--
Product TypeMOSFET--
Rise Time4.8 ns--
Factory Pack Quantity2500--
SubcategoryMOSFETs--
Typical Turn Off Delay Time27 ns--
Typical Turn On Delay Time10 ns--
Part # AliasesRS1E170GN--
Unit Weight0.002490 oz--
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