RU1C002ZPTCL vs RU1C002ZP vs RU1C002ZP TL

 
PartNumberRU1C002ZPTCLRU1C002ZPRU1C002ZP TL
DescriptionMOSFET 4V Drive Pch MOSFET Drive Pch
ManufacturerROHM Semiconductor--
Product CategoryMOSFET--
RoHSY--
TechnologySi--
Mounting StyleSMD/SMT--
Package / CaseSOT-323FL-3--
Number of Channels1 Channel--
Transistor PolarityP-Channel--
Vds Drain Source Breakdown Voltage20 V--
Id Continuous Drain Current200 mA--
Rds On Drain Source Resistance1.2 Ohms--
Vgs th Gate Source Threshold Voltage300 mV--
Vgs Gate Source Voltage4.5 V--
Qg Gate Charge1.4 nC--
Minimum Operating Temperature- 55 C--
Maximum Operating Temperature+ 150 C--
Pd Power Dissipation150 mW--
ConfigurationSingle--
Channel ModeEnhancement--
PackagingReel--
Height0.9 mm--
Length2 mm--
ProductMOSFET--
SeriesRU1C002ZP--
Transistor Type1 P-Channel MOSFET--
TypePower MOSFET--
Width1.25 mm--
BrandROHM Semiconductor--
Fall Time17 ns--
Product TypeMOSFET--
Rise Time4 ns--
Factory Pack Quantity3000--
SubcategoryMOSFETs--
Typical Turn Off Delay Time17 ns--
Typical Turn On Delay Time6 ns--
Part # AliasesRU1C002ZP--
Unit Weight0.004395 oz--
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