RV1C001ZPT2L vs RV1C001 vs RV1C001ZP

 
PartNumberRV1C001ZPT2LRV1C001RV1C001ZP
DescriptionMOSFET Small Signal MOSFET
ManufacturerROHM Semiconductor--
Product CategoryMOSFET--
RoHSY--
TechnologySi--
Mounting StyleSMD/SMT--
Package / CaseDFN0806-3--
Number of Channels1 Channel--
Transistor PolarityP-Channel--
Vds Drain Source Breakdown Voltage20 V--
Id Continuous Drain Current100 mA--
Rds On Drain Source Resistance3.8 Ohms--
Vgs th Gate Source Threshold Voltage1 V--
Vgs Gate Source Voltage10 V--
Minimum Operating Temperature- 55 C--
Maximum Operating Temperature+ 150 C--
Pd Power Dissipation100 mW--
ConfigurationSingle--
PackagingReel--
SeriesRV1C001ZP--
Transistor Type1 P-Channel--
BrandROHM Semiconductor--
Forward Transconductance Min120 mS--
Fall Time137 ns--
Product TypeMOSFET--
Rise Time62 ns--
Factory Pack Quantity8000--
SubcategoryMOSFETs--
Typical Turn Off Delay Time325 ns--
Typical Turn On Delay Time46 ns--
Part # AliasesRV1C001ZP--
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