RV2C010UNT2L vs RV2C010UN vs RV2C010UNM60T2L1

 
PartNumberRV2C010UNT2LRV2C010UNRV2C010UNM60T2L1
DescriptionMOSFET 20V 1A Nch Power MOSFET
ManufacturerROHM Semiconductor--
Product CategoryMOSFET--
RoHSY--
TechnologySi--
Mounting StyleSMD/SMT--
Package / CaseDFN-1006-3--
Number of Channels1 Channel--
Transistor PolarityN-Channel--
Vds Drain Source Breakdown Voltage20 V--
Id Continuous Drain Current1 A--
Rds On Drain Source Resistance470 mOhms--
Vgs th Gate Source Threshold Voltage300 mV--
Vgs Gate Source Voltage4.5 V--
Minimum Operating Temperature- 55 C--
Maximum Operating Temperature+ 150 C--
Pd Power Dissipation400 mW--
ConfigurationSingle--
Channel ModeEnhancement--
PackagingReel--
SeriesRV2C010UN--
Transistor Type1 N-Channel Power MOSFET--
BrandROHM Semiconductor--
Fall Time10 ns--
Product TypeMOSFET--
Rise Time15 ns--
Factory Pack Quantity8000--
SubcategoryMOSFETs--
Typical Turn Off Delay Time15 ns--
Typical Turn On Delay Time5 ns--
Part # AliasesRV2C010UN--
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