PartNumber | SCT20N120 | SCT20N120H | SCT20N170 |
Description | MOSFET 1200V silicon carbide MOSFET | MOSFET | |
Manufacturer | STMicroelectronics | STMicroelectronics | - |
Product Category | MOSFET | MOSFET | - |
RoHS | Y | - | - |
Technology | SiC | SiC | - |
Mounting Style | Through Hole | Through Hole | - |
Package / Case | HiP-247-3 | HiP247-3 | - |
Number of Channels | 1 Channel | 1 Channel | - |
Transistor Polarity | N-Channel | N-Channel | - |
Vds Drain Source Breakdown Voltage | 1.2 kV | 1200 V | - |
Id Continuous Drain Current | 20 A | 20 A | - |
Rds On Drain Source Resistance | 239 mOhms | 239 mOhms | - |
Vgs th Gate Source Threshold Voltage | 2 V | 2 V | - |
Vgs Gate Source Voltage | 20 V | - 10 V, 25 V | - |
Qg Gate Charge | 45 nC | 45 nC | - |
Minimum Operating Temperature | - 55 C | - 55 C | - |
Maximum Operating Temperature | + 200 C | + 200 C | - |
Pd Power Dissipation | 175 W | 175 W | - |
Configuration | Single | Single | - |
Channel Mode | Enhancement | Enhancement | - |
Tradename | HiP247â?¢ | - | - |
Packaging | Tube | - | - |
Series | SCT20N120 | - | - |
Transistor Type | 1 N-Channel Power MOSFET | 1 N-Channel | - |
Brand | STMicroelectronics | STMicroelectronics | - |
Fall Time | 17 ns | 17 ns | - |
Product Type | MOSFET | MOSFET | - |
Rise Time | 16 ns | 16 ns | - |
Factory Pack Quantity | 600 | 1000 | - |
Subcategory | MOSFETs | MOSFETs | - |
Typical Turn Off Delay Time | 27 ns | 27 ns | - |
Typical Turn On Delay Time | 10 ns | 10 ns | - |
Unit Weight | 1.340411 oz | - | - |