SCT2280KEC vs SCT2280ASSG vs SCT2280KE

 
PartNumberSCT2280KECSCT2280ASSGSCT2280KE
DescriptionMOSFET MOSFET1200V14A280m OhmSiliconCarbideSiC
ManufacturerROHM Semiconductor-ROHM Semiconductor
Product CategoryMOSFET-Transistors - FETs, MOSFETs - Single
RoHSY--
TechnologySiC-SiC
Mounting StyleThrough Hole-Through Hole
Package / CaseTO-247-3--
Number of Channels1 Channel-1 Channel
Transistor PolarityN-Channel-N-Channel
Vds Drain Source Breakdown Voltage1200 V--
Id Continuous Drain Current14 A--
Rds On Drain Source Resistance280 mOhms--
Vgs th Gate Source Threshold Voltage1.6 V--
Vgs Gate Source Voltage- 6 V, 22 V--
Qg Gate Charge36 nC--
Minimum Operating Temperature- 55 C-- 55 C
Maximum Operating Temperature+ 175 C-+ 175 C
Pd Power Dissipation108 W--
ConfigurationSingle-Single
Channel ModeEnhancement--
PackagingTube-Tube
SeriesSCT2x-SCT2280KE
Transistor Type1 N-Channel-1 N-Channel
BrandROHM Semiconductor--
Forward Transconductance Min1.4 S--
Fall Time29 ns-29 ns
Product TypeMOSFET--
Rise Time19 ns-19 ns
Factory Pack Quantity360--
SubcategoryMOSFETs--
Typical Turn Off Delay Time47 ns-47 ns
Typical Turn On Delay Time19 ns-19 ns
Part # AliasesSCT2280KE--
Unit Weight1.340411 oz-1.340411 oz
Package Case--TO-247-3
Pd Power Dissipation--108 W
Vgs Gate Source Voltage--- 6 V to + 22 V
Id Continuous Drain Current--14 A
Vds Drain Source Breakdown Voltage--1200 V
Vgs th Gate Source Threshold Voltage--1.6 V to 4 V
Rds On Drain Source Resistance--280 mOhms
Qg Gate Charge--36 nC
Forward Transconductance Min--1.4 S
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