PartNumber | SCT2H12NYTB | SCT2H12NZGC11 | SCT2H12NY |
Description | MOSFET N-Ch 1700V 4A 44W SiC Silicon Carbide | MOSFET 1700V 3.7A N-MOSFET Silicon Carbide SiC | |
Manufacturer | ROHM Semiconductor | ROHM Semiconductor | - |
Product Category | MOSFET | MOSFET | - |
RoHS | Y | Y | - |
Technology | SiC | SiC | - |
Mounting Style | SMD/SMT | Through Hole | - |
Package / Case | TO-268-3 | TO-3PFM-3 | - |
Number of Channels | 1 Channel | 1 Channel | - |
Transistor Polarity | N-Channel | N-Channel | - |
Vds Drain Source Breakdown Voltage | 1700 V | 1700 V | - |
Id Continuous Drain Current | 4 A | 3.7 A | - |
Rds On Drain Source Resistance | 1.15 Ohms | 1.15 Ohms | - |
Vgs th Gate Source Threshold Voltage | 1.6 V | 1.6 V | - |
Vgs Gate Source Voltage | 22 V | - 6 V, 22 V | - |
Qg Gate Charge | 14 nC | 14 nC | - |
Minimum Operating Temperature | - 55 C | - 55 C | - |
Maximum Operating Temperature | + 175 C | + 175 C | - |
Pd Power Dissipation | 44 W | 35 W | - |
Configuration | Single | Single | - |
Channel Mode | Enhancement | Enhancement | - |
Packaging | Reel | Tube | - |
Series | SCT2x | SCT2x | - |
Transistor Type | 1 N-Channel | 1 N-Channel | - |
Brand | ROHM Semiconductor | ROHM Semiconductor | - |
Forward Transconductance Min | 400 mS | 0.4 s | - |
Fall Time | 74 ns | 74 ns | - |
Product Type | MOSFET | MOSFET | - |
Rise Time | 21 ns | 21 ns | - |
Factory Pack Quantity | 800 | 30 | - |
Subcategory | MOSFETs | MOSFETs | - |
Typical Turn Off Delay Time | 35 ns | 35 ns | - |
Typical Turn On Delay Time | 16 ns | 16 ns | - |
Part # Aliases | SCT2H12NY | SCT2H12NZ | - |
Unit Weight | 0.141096 oz | 0.402300 oz | - |
Product | - | Power MOSFETs | - |
Type | - | N-Channel SiC Power MOSFET | - |