SCT3080ALHRC11 vs SCT3080ALGC11 vs SCT3080KLGC11

 
PartNumberSCT3080ALHRC11SCT3080ALGC11SCT3080KLGC11
DescriptionMOSFET 650V 30A 134W SIC 80mOhm TO-247NMOSFET N-Ch 650V 30A Silicon Carbide SiCMOSFET N-Ch 1200V SiC 31A 80mOhm TrenchMOS
ManufacturerROHM SemiconductorROHM SemiconductorROHM Semiconductor
Product CategoryMOSFETMOSFETMOSFET
RoHSYYY
TechnologySiCSiCSiC
Mounting StyleThrough HoleThrough HoleThrough Hole
Package / CaseTO-247N-3TO-247N-3TO-247N-3
Number of Channels1 Channel1 Channel1 Channel
Transistor PolarityN-ChannelN-ChannelN-Channel
Vds Drain Source Breakdown Voltage650 V650 V1200 V
Id Continuous Drain Current30 A30 A31 A
Rds On Drain Source Resistance80 mOhms80 mOhms80 mOhms
Vgs th Gate Source Threshold Voltage2.7 V2.7 V2.7 V
Vgs Gate Source Voltage- 4 V, 22 V- 4 V, 22 V- 4 V, 22 V
Qg Gate Charge48 nC48 nC60 nC
Minimum Operating Temperature- 55 C- 55 C- 55 C
Maximum Operating Temperature+ 175 C+ 175 C+ 175 C
Pd Power Dissipation134 W134 W165 W
ConfigurationSingleSingleSingle
Channel ModeEnhancementEnhancementEnhancement
PackagingTubeTubeTube
SeriesSCT3xSCT3xSCT3x
Transistor Type1 N-Channel1 N-Channel1 N-Channel
BrandROHM SemiconductorROHM SemiconductorROHM Semiconductor
Forward Transconductance Min3.8 S3.8 S4.4 S
Fall Time16 ns16 ns24 ns
Product TypeMOSFETMOSFETMOSFET
Rise Time26 ns26 ns22 ns
Factory Pack Quantity30450450
SubcategoryMOSFETsMOSFETsMOSFETs
Typical Turn Off Delay Time27 ns27 ns29 ns
Typical Turn On Delay Time16 ns16 ns15 ns
Part # Aliases-SCT3080ALSCT3080KL
Unit Weight-0.211644 oz0.211644 oz
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