PartNumber | SCT3080ALHRC11 | SCT3080ALGC11 | SCT3080KLGC11 |
Description | MOSFET 650V 30A 134W SIC 80mOhm TO-247N | MOSFET N-Ch 650V 30A Silicon Carbide SiC | MOSFET N-Ch 1200V SiC 31A 80mOhm TrenchMOS |
Manufacturer | ROHM Semiconductor | ROHM Semiconductor | ROHM Semiconductor |
Product Category | MOSFET | MOSFET | MOSFET |
RoHS | Y | Y | Y |
Technology | SiC | SiC | SiC |
Mounting Style | Through Hole | Through Hole | Through Hole |
Package / Case | TO-247N-3 | TO-247N-3 | TO-247N-3 |
Number of Channels | 1 Channel | 1 Channel | 1 Channel |
Transistor Polarity | N-Channel | N-Channel | N-Channel |
Vds Drain Source Breakdown Voltage | 650 V | 650 V | 1200 V |
Id Continuous Drain Current | 30 A | 30 A | 31 A |
Rds On Drain Source Resistance | 80 mOhms | 80 mOhms | 80 mOhms |
Vgs th Gate Source Threshold Voltage | 2.7 V | 2.7 V | 2.7 V |
Vgs Gate Source Voltage | - 4 V, 22 V | - 4 V, 22 V | - 4 V, 22 V |
Qg Gate Charge | 48 nC | 48 nC | 60 nC |
Minimum Operating Temperature | - 55 C | - 55 C | - 55 C |
Maximum Operating Temperature | + 175 C | + 175 C | + 175 C |
Pd Power Dissipation | 134 W | 134 W | 165 W |
Configuration | Single | Single | Single |
Channel Mode | Enhancement | Enhancement | Enhancement |
Packaging | Tube | Tube | Tube |
Series | SCT3x | SCT3x | SCT3x |
Transistor Type | 1 N-Channel | 1 N-Channel | 1 N-Channel |
Brand | ROHM Semiconductor | ROHM Semiconductor | ROHM Semiconductor |
Forward Transconductance Min | 3.8 S | 3.8 S | 4.4 S |
Fall Time | 16 ns | 16 ns | 24 ns |
Product Type | MOSFET | MOSFET | MOSFET |
Rise Time | 26 ns | 26 ns | 22 ns |
Factory Pack Quantity | 30 | 450 | 450 |
Subcategory | MOSFETs | MOSFETs | MOSFETs |
Typical Turn Off Delay Time | 27 ns | 27 ns | 29 ns |
Typical Turn On Delay Time | 16 ns | 16 ns | 15 ns |
Part # Aliases | - | SCT3080AL | SCT3080KL |
Unit Weight | - | 0.211644 oz | 0.211644 oz |