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| PartNumber | SCT30N120 | SCT30N120D2 | SCT30N120H |
| Description | MOSFET 1200V silicon carbide MOSFET | MOSFET | MOSFET |
| Manufacturer | STMicroelectronics | STMicroelectronics | STMicroelectronics |
| Product Category | MOSFET | MOSFET | MOSFET |
| RoHS | Y | - | - |
| Technology | SiC | SiC | SiC |
| Mounting Style | Through Hole | Through Hole | Through Hole |
| Package / Case | HiP-247-3 | HiP247-3 | HiP-247-3 |
| Number of Channels | 1 Channel | 1 Channel | 1 Channel |
| Transistor Polarity | N-Channel | N-Channel | N-Channel |
| Vds Drain Source Breakdown Voltage | 1.2 kV | 1200 V | 1200 V |
| Id Continuous Drain Current | 45 A | 45 A | 45 A |
| Rds On Drain Source Resistance | 80 mOhms | 100 mOhms | 100 mOhms |
| Vgs th Gate Source Threshold Voltage | 2.6 V | 1.8 V | 1.8 V |
| Vgs Gate Source Voltage | 25 V, - 10 V | - 10 V to 25 V | - 10 V to 25 V |
| Qg Gate Charge | 105 nC | - | 105 nC |
| Minimum Operating Temperature | - 55 C | - 55 C | - 55 C |
| Maximum Operating Temperature | + 200 C | + 200 C | + 200 C |
| Pd Power Dissipation | 270 W | 270 W | 270 W |
| Configuration | Single | Single | Single |
| Tradename | HiP247â?¢ | - | - |
| Packaging | Tube | - | - |
| Series | SCT30N120 | SCT30N120D2 | SCT30N120H |
| Transistor Type | 1 N-Channel | 1 N-Channel | 1 N-Channel |
| Brand | STMicroelectronics | STMicroelectronics | STMicroelectronics |
| Fall Time | 28 ns | 28 ns | 28 ns |
| Product Type | MOSFET | MOSFET | MOSFET |
| Rise Time | 20 ns | 20 ns | 20 ns |
| Factory Pack Quantity | 600 | 980 | 1000 |
| Subcategory | MOSFETs | MOSFETs | MOSFETs |
| Typical Turn Off Delay Time | 45 ns | 45 ns | 45 ns |
| Typical Turn On Delay Time | 19 ns | 19 ns | 19 ns |
| Unit Weight | 1.340411 oz | - | - |
| Channel Mode | - | Enhancement | Enhancement |