PartNumber | SI2328DS-T1-E3 | SI2328DS-T1-GE3 | SI2328DS-T1-E3-CUT TAPE |
Description | MOSFET 100V Vds 20V Vgs SOT-23 | MOSFET 100V Vds 20V Vgs SOT-23 | |
Manufacturer | Vishay | Vishay | - |
Product Category | MOSFET | MOSFET | - |
RoHS | Y | Y | - |
Technology | Si | Si | - |
Mounting Style | SMD/SMT | SMD/SMT | - |
Package / Case | SOT-23-3 | SOT-23-3 | - |
Tradename | TrenchFET | TrenchFET | - |
Packaging | Reel | Reel | - |
Height | 1.45 mm | 1.45 mm | - |
Length | 2.9 mm | 2.9 mm | - |
Series | SI2 | SI2 | - |
Width | 1.6 mm | 1.6 mm | - |
Brand | Vishay / Siliconix | Vishay / Siliconix | - |
Product Type | MOSFET | MOSFET | - |
Factory Pack Quantity | 3000 | 3000 | - |
Subcategory | MOSFETs | MOSFETs | - |
Part # Aliases | SI2328DS-E3 | SI2328DS-GE3 | - |
Unit Weight | 0.000282 oz | 0.000282 oz | - |
Number of Channels | - | 1 Channel | - |
Transistor Polarity | - | N-Channel | - |
Vds Drain Source Breakdown Voltage | - | 100 V | - |
Id Continuous Drain Current | - | 1.15 A | - |
Rds On Drain Source Resistance | - | 250 mOhms | - |
Vgs th Gate Source Threshold Voltage | - | 2 V | - |
Vgs Gate Source Voltage | - | 10 V | - |
Qg Gate Charge | - | 3.3 nC | - |
Minimum Operating Temperature | - | - 55 C | - |
Maximum Operating Temperature | - | + 150 C | - |
Pd Power Dissipation | - | 0.73 W | - |
Configuration | - | Single | - |
Channel Mode | - | Enhancement | - |
Transistor Type | - | 1 N-Channel | - |
Forward Transconductance Min | - | 4 S | - |
Fall Time | - | 10 ns | - |
Rise Time | - | 11 ns | - |
Typical Turn Off Delay Time | - | 9 ns | - |
Typical Turn On Delay Time | - | 7 ns | - |