SI2343DS-T1-E3 vs SI2343DS-T1 vs SI2343DS-T1-E3 (VISHAY)

 
PartNumberSI2343DS-T1-E3SI2343DS-T1SI2343DS-T1-E3 (VISHAY)
DescriptionMOSFET 30V 4.0A 1.25W 53 mohms @ 10VMOSFET RECOMMENDED ALT 781-SI2343CDS-T1-GE3
ManufacturerVishayVishay-
Product CategoryMOSFETMOSFET-
RoHSYY-
TechnologySiSi-
Mounting StyleSMD/SMT--
Package / CaseSOT-23-3--
Number of Channels1 Channel--
Transistor PolarityP-Channel--
Vds Drain Source Breakdown Voltage30 V--
Id Continuous Drain Current3.1 A--
Rds On Drain Source Resistance53 mOhms--
Vgs th Gate Source Threshold Voltage1 V--
Vgs Gate Source Voltage10 V--
Qg Gate Charge14 nC--
Minimum Operating Temperature- 55 C--
Maximum Operating Temperature+ 150 C--
Pd Power Dissipation0.75 W--
ConfigurationSingle--
Channel ModeEnhancement--
TradenameTrenchFETTrenchFET-
PackagingReelReel-
SeriesSI2SI2-
Transistor Type1 P-Channel--
BrandVishay / SiliconixVishay / Siliconix-
Forward Transconductance Min10 S--
Fall Time20 ns--
Product TypeMOSFETMOSFET-
Rise Time15 ns--
Factory Pack Quantity30003000-
SubcategoryMOSFETsMOSFETs-
Typical Turn Off Delay Time31 ns--
Typical Turn On Delay Time10 ns--
Part # AliasesSI2343DS-E3--
Unit Weight0.000282 oz0.000282 oz-
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