SI2371EDS-T1-GE3 vs SI2372DS-T1-GE3 vs SI2371EDS-T1-GE3-CUT TAPE

 
PartNumberSI2371EDS-T1-GE3SI2372DS-T1-GE3SI2371EDS-T1-GE3-CUT TAPE
DescriptionMOSFET -30V Vds 12V Vgs SOT-23MOSFET 30V Vds 20V Vgs SOT-23
ManufacturerVishayVishay-
Product CategoryMOSFETMOSFET-
RoHSYY-
TechnologySiSi-
Mounting StyleSMD/SMTSMD/SMT-
Package / CaseSOT-23-3SOT-23-3-
Number of Channels1 Channel--
Transistor PolarityP-Channel--
Vds Drain Source Breakdown Voltage30 V--
Id Continuous Drain Current4.8 A--
Rds On Drain Source Resistance45 mOhms--
Vgs th Gate Source Threshold Voltage600 mV--
Vgs Gate Source Voltage10 V--
Qg Gate Charge22.8 nC--
Minimum Operating Temperature- 55 C--
Maximum Operating Temperature+ 150 C--
Pd Power Dissipation1.7 W--
ConfigurationSingle--
Channel ModeEnhancement--
TradenameTrenchFETTrenchFET-
PackagingReelReel-
SeriesSI2SI2-
Transistor Type1 P-Channel--
BrandVishay / SiliconixVishay / Siliconix-
Fall Time52 ns--
Product TypeMOSFETMOSFET-
Rise Time8 ns--
Factory Pack Quantity30003000-
SubcategoryMOSFETsMOSFETs-
Typical Turn Off Delay Time52 ns--
Typical Turn On Delay Time28 ns--
Unit Weight0.000282 oz0.000282 oz-
Height-1.45 mm-
Length-2.9 mm-
Width-1.6 mm-
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