PartNumber | SI4214DDY-T1-GE3 | SI4214DDY-T1-GE3,SI4214D | SI4214DDY-T1-GE3,SI4214DDY, |
Description | MOSFET 30V Vds 20V Vgs SO-8 | ||
Manufacturer | Vishay | - | - |
Product Category | MOSFET | - | - |
RoHS | E | - | - |
Technology | Si | - | - |
Mounting Style | SMD/SMT | - | - |
Package / Case | SO-8 | - | - |
Number of Channels | 2 Channel | - | - |
Transistor Polarity | N-Channel | - | - |
Vds Drain Source Breakdown Voltage | 30 V | - | - |
Id Continuous Drain Current | 8.5 A | - | - |
Rds On Drain Source Resistance | 19.5 mOhms | - | - |
Vgs th Gate Source Threshold Voltage | 1.2 V | - | - |
Vgs Gate Source Voltage | 10 V | - | - |
Qg Gate Charge | 14.5 nC | - | - |
Minimum Operating Temperature | - 55 C | - | - |
Maximum Operating Temperature | + 150 C | - | - |
Pd Power Dissipation | 3.1 W | - | - |
Configuration | Dual | - | - |
Channel Mode | Enhancement | - | - |
Tradename | TrenchFET | - | - |
Packaging | Reel | - | - |
Height | 1.75 mm | - | - |
Length | 4.9 mm | - | - |
Series | SI4 | - | - |
Transistor Type | 2 N-Channel | - | - |
Width | 3.9 mm | - | - |
Brand | Vishay / Siliconix | - | - |
Forward Transconductance Min | 27 S | - | - |
Fall Time | 7 ns | - | - |
Product Type | MOSFET | - | - |
Rise Time | 10 ns | - | - |
Factory Pack Quantity | 2500 | - | - |
Subcategory | MOSFETs | - | - |
Typical Turn Off Delay Time | 15 ns | - | - |
Typical Turn On Delay Time | 7 ns | - | - |
Part # Aliases | SI4920DY-T1-E3-S | - | - |
Unit Weight | 0.017870 oz | - | - |