PartNumber | SI4403CDY-T1-GE3 | SI4403CDY-T1-GE3-CUT TAPE | SI4403CDY |
Description | MOSFET 1.8V P-Channel | Small Signal Field-Effect Transistor, 13.4A I(D), 20V, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET, MS-012AA | |
Manufacturer | Vishay | - | - |
Product Category | MOSFET | - | - |
RoHS | Y | - | - |
Technology | Si | - | - |
Mounting Style | SMD/SMT | - | - |
Package / Case | SO-8 | - | - |
Number of Channels | 1 Channel | - | - |
Transistor Polarity | P-Channel | - | - |
Vds Drain Source Breakdown Voltage | 20 V | - | - |
Id Continuous Drain Current | 13.4 A | - | - |
Rds On Drain Source Resistance | 15.5 mOhms | - | - |
Vgs th Gate Source Threshold Voltage | 400 mV | - | - |
Vgs Gate Source Voltage | 4.5 V | - | - |
Qg Gate Charge | 60 nC | - | - |
Minimum Operating Temperature | - 55 C | - | - |
Maximum Operating Temperature | + 150 C | - | - |
Pd Power Dissipation | 5 W | - | - |
Configuration | Single | - | - |
Channel Mode | Enhancement | - | - |
Tradename | TrenchFET | - | - |
Packaging | Reel | - | - |
Height | 1.75 mm | - | - |
Length | 4.9 mm | - | - |
Series | SI4 | - | - |
Transistor Type | 1 P-Channel | - | - |
Width | 3.9 mm | - | - |
Brand | Vishay / Siliconix | - | - |
Forward Transconductance Min | 40 S | - | - |
Fall Time | 40 ns | - | - |
Product Type | MOSFET | - | - |
Rise Time | 16 ns | - | - |
Factory Pack Quantity | 2500 | - | - |
Subcategory | MOSFETs | - | - |
Typical Turn Off Delay Time | 101 ns | - | - |
Typical Turn On Delay Time | 14 ns | - | - |
Unit Weight | 0.017870 oz | - | - |