SI4559ADY-T1-E3 vs SI4559ADY-T1-E3-CUT TAPE vs SI4559ADY-T1-E3 GE3

 
PartNumberSI4559ADY-T1-E3SI4559ADY-T1-E3-CUT TAPESI4559ADY-T1-E3 GE3
DescriptionMOSFET -60V Vds 20V Vgs SO-8 N&P PAIR
ManufacturerVishay--
Product CategoryMOSFET--
RoHSE--
TechnologySi--
Mounting StyleSMD/SMT--
Package / CaseSO-8--
Number of Channels2 Channel--
Transistor PolarityN-Channel, P-Channel--
Vds Drain Source Breakdown Voltage60 V--
Id Continuous Drain Current5.3 A, 3.9 A--
Rds On Drain Source Resistance58 mOhms, 120 mOhms--
Vgs th Gate Source Threshold Voltage1 V--
Vgs Gate Source Voltage20 V--
Qg Gate Charge20 nC, 22 nC--
Minimum Operating Temperature- 55 C--
Maximum Operating Temperature+ 150 C--
Pd Power Dissipation3.1 W, 3.4 W--
ConfigurationDual--
Channel ModeEnhancement--
TradenameTrenchFET--
PackagingReel--
SeriesSI4--
Transistor Type1 N-Channel, 1 P-Channel--
BrandVishay / Siliconix--
Forward Transconductance Min15 S, 8.5 S--
Fall Time10 ns, 30 ns--
Product TypeMOSFET--
Rise Time65 ns, 70 ns--
Factory Pack Quantity2500--
SubcategoryMOSFETs--
Typical Turn Off Delay Time15 ns, 40 ns--
Typical Turn On Delay Time15 ns, 30 ns--
Part # AliasesSI4559ADY-E3--
Unit Weight0.017870 oz--
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