SI4948BEY-T1-E3 vs SI4948BEY-T1-E3-CUT TAPE vs SI4948BEY-T1

 
PartNumberSI4948BEY-T1-E3SI4948BEY-T1-E3-CUT TAPESI4948BEY-T1
DescriptionMOSFET -60V Vds 20V Vgs SO-8
ManufacturerVishay--
Product CategoryMOSFET--
RoHSE--
TechnologySi--
Mounting StyleSMD/SMT--
Package / CaseSO-8--
Number of Channels2 Channel--
Transistor PolarityP-Channel--
Vds Drain Source Breakdown Voltage60 V--
Id Continuous Drain Current3.1 A--
Rds On Drain Source Resistance120 mOhms--
Vgs th Gate Source Threshold Voltage1 V--
Vgs Gate Source Voltage10 V--
Qg Gate Charge14.5 nC--
Minimum Operating Temperature- 55 C--
Maximum Operating Temperature+ 175 C--
Pd Power Dissipation2.4 W--
ConfigurationDual--
Channel ModeEnhancement--
TradenameTrenchFET--
PackagingReel--
SeriesSI4--
Transistor Type2 P-Channel--
BrandVishay / Siliconix--
Forward Transconductance Min8.5 S--
Fall Time35 ns--
Product TypeMOSFET--
Rise Time15 ns--
Factory Pack Quantity2500--
SubcategoryMOSFETs--
Typical Turn Off Delay Time50 ns--
Typical Turn On Delay Time10 ns--
Part # AliasesSI4948BEY-E3--
Unit Weight0.006596 oz--
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