SI5471DC-T1-GE3 vs SI5473DC-T vs SI5473DC-T1

 
PartNumberSI5471DC-T1-GE3SI5473DC-TSI5473DC-T1
DescriptionMOSFET -20V Vds 12V Vgs 1206-8 ChipFET
ManufacturerVishay--
Product CategoryMOSFET--
RoHSY--
TechnologySi--
Mounting StyleSMD/SMT--
Package / CaseChipFET-8--
Number of Channels1 Channel--
Transistor PolarityP-Channel--
Vds Drain Source Breakdown Voltage20 V--
Id Continuous Drain Current6 A--
Rds On Drain Source Resistance16.7 mOhms--
Vgs th Gate Source Threshold Voltage1.1 V--
Vgs Gate Source Voltage12 V--
Qg Gate Charge96 nC--
Minimum Operating Temperature- 55 C--
Maximum Operating Temperature+ 150 C--
Pd Power Dissipation6.3 W--
ConfigurationSingle--
Channel ModeEnhancement--
TradenameTrenchFET--
PackagingReel--
SeriesSI54--
Transistor Type1 P-Channel--
BrandVishay / Siliconix--
Forward Transconductance Min30 S--
Fall Time33 ns--
Product TypeMOSFET--
Rise Time35 ns--
Factory Pack Quantity3000--
SubcategoryMOSFETs--
Typical Turn Off Delay Time70 ns--
Typical Turn On Delay Time32 ns--
Part # AliasesSI5471DC-GE3--
Unit Weight0.002998 oz--
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