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| PartNumber | SI6954ADQ-T1-GE3 | SI6954ADQ-T1-E3 | SI6954ADQ-T2 |
| Description | MOSFET 30V Vds 20V Vgs TSSOP-8 | MOSFET 30V Vds 20V Vgs TSSOP-8 | |
| Manufacturer | Vishay | Vishay | - |
| Product Category | MOSFET | MOSFET | - |
| RoHS | Y | E | - |
| Technology | Si | Si | - |
| Tradename | TrenchFET | TrenchFET | - |
| Packaging | Reel | Reel | - |
| Series | SI6 | SI6 | - |
| Brand | Vishay / Siliconix | Vishay / Siliconix | - |
| Product Type | MOSFET | MOSFET | - |
| Factory Pack Quantity | 3000 | 3000 | - |
| Subcategory | MOSFETs | MOSFETs | - |
| Part # Aliases | SI6954ADQ-GE3 | SI6954ADQ-E3 | - |
| Unit Weight | 0.005573 oz | 0.005573 oz | - |
| Mounting Style | - | SMD/SMT | - |
| Package / Case | - | TSSOP-8 | - |
| Number of Channels | - | 2 Channel | - |
| Transistor Polarity | - | N-Channel | - |
| Vds Drain Source Breakdown Voltage | - | 30 V | - |
| Id Continuous Drain Current | - | 3.4 A | - |
| Rds On Drain Source Resistance | - | 53 mOhms | - |
| Vgs th Gate Source Threshold Voltage | - | 1 V | - |
| Vgs Gate Source Voltage | - | 20 V | - |
| Qg Gate Charge | - | 16 nC | - |
| Minimum Operating Temperature | - | - 55 C | - |
| Maximum Operating Temperature | - | + 150 C | - |
| Pd Power Dissipation | - | 1 W | - |
| Configuration | - | Dual | - |
| Channel Mode | - | Enhancement | - |
| Height | - | 1.2 mm | - |
| Length | - | 4.4 mm | - |
| Transistor Type | - | 2 N-Channel | - |
| Width | - | 3 mm | - |
| Forward Transconductance Min | - | 10 S | - |
| Fall Time | - | 8 ns | - |
| Rise Time | - | 10 ns | - |
| Typical Turn Off Delay Time | - | 23 ns | - |
| Typical Turn On Delay Time | - | 12 ns | - |