SI7121ADN-T1-GE3 vs SI7121ADN-T1-GE3-CUT TAPE vs SI7121D

 
PartNumberSI7121ADN-T1-GE3SI7121ADN-T1-GE3-CUT TAPESI7121D
DescriptionMOSFET -30V Vds 25V Vgs PowerPAK 1212-8
ManufacturerVishay--
Product CategoryMOSFET--
RoHSY--
TechnologySi--
Mounting StyleSMD/SMT--
Package / CasePowerPAK-1212-8--
Number of Channels1 Channel--
Transistor PolarityP-Channel--
Vds Drain Source Breakdown Voltage30 V--
Id Continuous Drain Current18 A--
Rds On Drain Source Resistance12.5 mOhms--
Vgs th Gate Source Threshold Voltage2.5 V--
Vgs Gate Source Voltage25 V--
Qg Gate Charge50 nC--
Minimum Operating Temperature- 50 C--
Maximum Operating Temperature+ 150 C--
Pd Power Dissipation27.8 W--
ConfigurationSingle--
Channel ModeEnhancement--
TradenameTrenchFET--
PackagingReel--
Height1.04 mm--
Length3.3 mm--
SeriesSI7--
Transistor Type1 P-Channel--
Width3.3 mm--
BrandVishay / Siliconix--
Forward Transconductance Min52 S--
Fall Time10 ns--
Product TypeMOSFET--
Rise Time34 ns--
Factory Pack Quantity3000--
SubcategoryMOSFETs--
Typical Turn Off Delay Time24 ns--
Typical Turn On Delay Time38 ns--
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