SI7141DP-T1-GE3 vs SI7143DP vs SI7143DP-T1-E3

 
PartNumberSI7141DP-T1-GE3SI7143DPSI7143DP-T1-E3
DescriptionMOSFET -20V Vds 20V Vgs PowerPAK SO-8
ManufacturerVishay--
Product CategoryMOSFET--
RoHSE--
TechnologySi--
Mounting StyleSMD/SMT--
Package / CasePowerPAK-SO-8--
Number of Channels1 Channel--
Transistor PolarityP-Channel--
Vds Drain Source Breakdown Voltage20 V--
Id Continuous Drain Current60 A--
Rds On Drain Source Resistance1.5 mOhms--
Vgs th Gate Source Threshold Voltage2.3 V--
Vgs Gate Source Voltage20 V--
Qg Gate Charge400 nC--
Minimum Operating Temperature- 55 C--
Maximum Operating Temperature+ 150 C--
Pd Power Dissipation104 W--
ConfigurationSingle--
Channel ModeEnhancement--
TradenameTrenchFET--
PackagingReel--
SeriesSI7--
Transistor Type1 P-Channel--
BrandVishay / Siliconix--
Forward Transconductance Min103 S--
Fall Time38 ns--
Product TypeMOSFET--
Rise Time16 ns--
Factory Pack Quantity3000--
SubcategoryMOSFETs--
Typical Turn Off Delay Time130 ns--
Typical Turn On Delay Time25 ns--
Part # AliasesSI7141DP-GE3--
Unit Weight0.017870 oz--
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