SI7617DN-T1-GE3 vs SI7617DN-T1-GE3-CUT TAPE vs SI7617DN-T1-E3

 
PartNumberSI7617DN-T1-GE3SI7617DN-T1-GE3-CUT TAPESI7617DN-T1-E3
DescriptionMOSFET -30V Vds 25V Vgs PowerPAK 1212-8
ManufacturerVishay--
Product CategoryMOSFET--
RoHSE--
TechnologySi--
Mounting StyleSMD/SMT--
Package / CasePowerPAK-1212-8--
Number of Channels1 Channel--
Transistor PolarityP-Channel--
Vds Drain Source Breakdown Voltage30 V--
Id Continuous Drain Current35 A--
Rds On Drain Source Resistance12.3 mOhms--
Vgs th Gate Source Threshold Voltage1.2 V--
Vgs Gate Source Voltage10 V--
Qg Gate Charge39 nC--
Minimum Operating Temperature- 55 C--
Maximum Operating Temperature+ 150 C--
Pd Power Dissipation52 W--
ConfigurationSingle--
Channel ModeEnhancement--
TradenameTrenchFET--
PackagingReel--
SeriesSI7--
Transistor Type1 P-Channel--
BrandVishay / Siliconix--
Forward Transconductance Min35 S--
Fall Time9 ns, 11 ns--
Product TypeMOSFET--
Rise Time9 ns, 43 ns--
Factory Pack Quantity3000--
SubcategoryMOSFETs--
Typical Turn Off Delay Time30 ns, 32 ns--
Typical Turn On Delay Time11 ns, 40 ns--
Part # AliasesSI7617DN-GE3--
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