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| PartNumber | SI7872DP-T1-E3 | SI7872DP-T1-GE3 | SI7872DP-T1-T3 |
| Description | MOSFET 30V 10A 0.022Ohm | RF Bipolar Transistors MOSFET 30V 10A 3.5W 22mohm @ 10V | |
| Manufacturer | Vishay | Vishay Siliconix | - |
| Product Category | MOSFET | FETs - Arrays | - |
| RoHS | E | - | - |
| Technology | Si | Si | - |
| Tradename | TrenchFET | - | - |
| Packaging | Reel | Digi-ReelR Alternate Packaging | - |
| Series | SI7 | LITTLE FOOTR | - |
| Brand | Vishay / Siliconix | - | - |
| Product Type | MOSFET | - | - |
| Factory Pack Quantity | 3000 | - | - |
| Subcategory | MOSFETs | - | - |
| Part # Aliases | SI7872DP-E3 | - | - |
| Unit Weight | 0.017870 oz | 0.017870 oz | - |
| Part Aliases | - | SI7872DP-GE3 | - |
| Mounting Style | - | SMD/SMT | - |
| Package Case | - | PowerPAKR SO-8 Dual | - |
| Operating Temperature | - | -55°C ~ 150°C (TJ) | - |
| Mounting Type | - | Surface Mount | - |
| Number of Channels | - | 2 Channel | - |
| Supplier Device Package | - | PowerPAKR SO-8 Dual | - |
| Configuration | - | Dual | - |
| FET Type | - | 2 N-Channel (Half Bridge) | - |
| Power Max | - | 1.4W | - |
| Transistor Type | - | 2 N-Channel | - |
| Drain to Source Voltage Vdss | - | 30V | - |
| Input Capacitance Ciss Vds | - | - | - |
| FET Feature | - | Logic Level Gate | - |
| Current Continuous Drain Id 25°C | - | 6.4A | - |
| Rds On Max Id Vgs | - | 22 mOhm @ 7.5A, 10V | - |
| Vgs th Max Id | - | 3V @ 250μA | - |
| Gate Charge Qg Vgs | - | 11nC @ 4.5V | - |
| Pd Power Dissipation | - | 1.4 W | - |
| Maximum Operating Temperature | - | + 150 C | - |
| Minimum Operating Temperature | - | - 55 C | - |
| Vgs Gate Source Voltage | - | 20 V 12 V | - |
| Id Continuous Drain Current | - | 6.4 A | - |
| Vds Drain Source Breakdown Voltage | - | 30 V | - |
| Rds On Drain Source Resistance | - | 22 mOhms | - |
| Transistor Polarity | - | N-Channel | - |