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| PartNumber | SI8487DB-T1-E1 | SI8483DB-T2-E1 | SI8481DB-T1-E1 |
| Description | MOSFET -30V Vds 12V Vgs MICRO FOOT 1.6 x 1.6 | MOSFET -12V Vds 10V Vgs MICRO FOOT 1.5 x 1 | MOSFET -20V Vds 8V Vgs MICRO FOOT |
| Manufacturer | Vishay | Vishay | Vishay |
| Product Category | MOSFET | MOSFET | MOSFET |
| RoHS | Y | Y | Y |
| Technology | Si | Si | Si |
| Mounting Style | SMD/SMT | SMD/SMT | SMD/SMT |
| Package / Case | MicroFoot-4 | MicroFoot-6 | MicroFoot-4 |
| Number of Channels | 1 Channel | 1 Channel | 1 Channel |
| Transistor Polarity | P-Channel | P-Channel | P-Channel |
| Vds Drain Source Breakdown Voltage | 30 V | 12 V | 20 V |
| Id Continuous Drain Current | 7.7 A | 16 A | 9.7 A |
| Rds On Drain Source Resistance | 25 mOhms | 22 mOhms | 17 mOhms |
| Vgs th Gate Source Threshold Voltage | 1.2 V | 800 mV | 900 mV |
| Vgs Gate Source Voltage | 12 V | 10 V | 8 V |
| Qg Gate Charge | 80 nC | 65 nC | 81 nC |
| Minimum Operating Temperature | - 55 C | - 55 C | - 55 C |
| Maximum Operating Temperature | + 150 C | + 150 C | + 150 C |
| Pd Power Dissipation | 2.7 W | 13 W | 2.8 W |
| Configuration | Single | Single | Single |
| Channel Mode | Enhancement | Enhancement | Enhancement |
| Tradename | TrenchFET | TrenchFET | - |
| Packaging | Reel | Reel | Reel |
| Height | 0.65 mm | - | - |
| Length | 1.6 mm | - | - |
| Series | SI8 | SI8 | - |
| Transistor Type | 1 P-Channel | 1 P-Channel | 1 P-Channel |
| Width | 1.6 mm | - | - |
| Brand | Vishay / Siliconix | Vishay / Siliconix | Vishay / Siliconix |
| Forward Transconductance Min | 16 S | 10 S | 22 S |
| Fall Time | 60 ns | 10 ns | 110 ns |
| Product Type | MOSFET | MOSFET | MOSFET |
| Rise Time | 22 ns | 25 ns | 20 ns |
| Factory Pack Quantity | 3000 | 3000 | 3000 |
| Subcategory | MOSFETs | MOSFETs | MOSFETs |
| Typical Turn Off Delay Time | 195 ns | 40 ns | 400 ns |
| Typical Turn On Delay Time | 25 ns | 20 ns | 7 ns |
| Part # Aliases | SI8487DB-E1 | - | - |