SI8821EDB-T2-E1 vs SI8822 vs SI8822(ESD)

 
PartNumberSI8821EDB-T2-E1SI8822SI8822(ESD)
DescriptionMOSFET -30V Vds 12V Vgs MICRO FOOT 0.8 x 0.8
ManufacturerVishay--
Product CategoryMOSFET--
RoHSY--
TechnologySi--
Mounting StyleSMD/SMT--
Package / CaseMicroFoot-4--
Number of Channels1 Channel--
Transistor PolarityP-Channel--
Vds Drain Source Breakdown Voltage30 V--
Id Continuous Drain Current2.3 A--
Rds On Drain Source Resistance105 mOhms--
Vgs th Gate Source Threshold Voltage1.3 V--
Vgs Gate Source Voltage12 V--
Qg Gate Charge17 nC--
Minimum Operating Temperature- 55 C--
Maximum Operating Temperature+ 150 C--
Pd Power Dissipation900 mW--
ConfigurationSingle--
Channel ModeEnhancement--
TradenameTrenchFET--
PackagingReel--
SeriesSI8--
Transistor Type1 P-Channel--
BrandVishay / Siliconix--
Forward Transconductance Min4.8 S--
Fall Time15 ns--
Product TypeMOSFET--
Rise Time20 ns--
Factory Pack Quantity3000--
SubcategoryMOSFETs--
Typical Turn Off Delay Time40 ns--
Typical Turn On Delay Time25 ns--
Unit Weight0.004233 oz--
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