PartNumber | SIA421DJ-T1-GE3 | SIA425EDJ-T1-GE3 | SIA421DJ-T1-GE3-CUT TAPE |
Description | MOSFET -30V Vds 20V Vgs PowerPAK SC-70 | IGBT Transistors MOSFET 20V 4.5A 15.6W 60mOhms @ 4.5V | |
Manufacturer | Vishay | VISHAY | - |
Product Category | MOSFET | FETs - Single | - |
RoHS | Y | - | - |
Technology | Si | Si | - |
Mounting Style | SMD/SMT | SMD/SMT | - |
Package / Case | SC-70-6 | - | - |
Number of Channels | 1 Channel | - | - |
Transistor Polarity | P-Channel | P-Channel | - |
Vds Drain Source Breakdown Voltage | 30 V | - | - |
Id Continuous Drain Current | 12 A | - | - |
Rds On Drain Source Resistance | 35 mOhms | - | - |
Vgs th Gate Source Threshold Voltage | 1.5 V | - | - |
Vgs Gate Source Voltage | 10 V | - | - |
Qg Gate Charge | 19 nC | - | - |
Minimum Operating Temperature | - 55 C | - | - |
Maximum Operating Temperature | + 150 C | + 150 C | - |
Pd Power Dissipation | 19 W | - | - |
Configuration | Single | - | - |
Channel Mode | Enhancement | - | - |
Tradename | TrenchFET, PowerPAK | - | - |
Packaging | Reel | Reel | - |
Series | SIA | - | - |
Transistor Type | 1 P-Channel | - | - |
Brand | Vishay / Siliconix | - | - |
Forward Transconductance Min | 15 S | - | - |
Fall Time | 10 ns | - | - |
Product Type | MOSFET | - | - |
Rise Time | 12 ns | - | - |
Factory Pack Quantity | 3000 | - | - |
Subcategory | MOSFETs | - | - |
Typical Turn Off Delay Time | 30 ns | - | - |
Typical Turn On Delay Time | 10 ns | - | - |
Part # Aliases | SIA421DJ-GE3 | - | - |
Part Aliases | - | SIA425EDJ-GE3 | - |
Package Case | - | PowerPAK-SC-70-6 | - |
Pd Power Dissipation | - | 15.6 W | - |
Vgs Gate Source Voltage | - | 12 V | - |
Id Continuous Drain Current | - | - 4.5 A | - |
Vds Drain Source Breakdown Voltage | - | - 20 V | - |
Rds On Drain Source Resistance | - | 60 mOhms | - |