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| PartNumber | SIHA21N60EF-E3 | SIHA20N50E-E3 | SIHA21N65EF-E3 |
| Description | MOSFET 600V Vds 30V Vgs TO-220 FULLPAK | MOSFET 500V Vds 30V Vgs TO-220 FULLPAK | MOSFET 650V Vds 30V Vgs TO-220 FULLPAK |
| Manufacturer | Vishay | Vishay | Vishay |
| Product Category | MOSFET | MOSFET | MOSFET |
| RoHS | Y | Y | Y |
| Technology | Si | Si | Si |
| Mounting Style | Through Hole | Through Hole | Through Hole |
| Package / Case | TO-220FP-3 | TO-220FP-3 | TO-220FP-3 |
| Packaging | Tube | Tube | Tube |
| Series | EF | E | EF |
| Brand | Vishay / Siliconix | Vishay / Siliconix | Vishay / Siliconix |
| Product Type | MOSFET | MOSFET | MOSFET |
| Factory Pack Quantity | 50 | 50 | 50 |
| Subcategory | MOSFETs | MOSFETs | MOSFETs |
| Unit Weight | 0.211644 oz | 0.211644 oz | 0.211644 oz |
| Number of Channels | - | 1 Channel | - |
| Transistor Polarity | - | N-Channel | - |
| Vds Drain Source Breakdown Voltage | - | 550 V | - |
| Id Continuous Drain Current | - | 19 A | - |
| Rds On Drain Source Resistance | - | 184 mOhms | - |
| Vgs th Gate Source Threshold Voltage | - | 4 V | - |
| Vgs Gate Source Voltage | - | 30 V | - |
| Qg Gate Charge | - | 46 nC | - |
| Minimum Operating Temperature | - | - 55 C | - |
| Maximum Operating Temperature | - | + 150 C | - |
| Pd Power Dissipation | - | 34 W | - |
| Configuration | - | Single | - |
| Channel Mode | - | Enhancement | - |
| Fall Time | - | 25 ns | - |
| Rise Time | - | 27 ns | - |
| Typical Turn Off Delay Time | - | 48 ns | - |
| Typical Turn On Delay Time | - | 17 ns | - |