PartNumber | SIHB20N50E-GE3 | SIHB21N60EF-GE3 | SIHB21N65EF-GE3 |
Description | MOSFET 500V Vds 30V Vgs D2PAK (TO-263) | MOSFET 600V Vds 30V Vgs D2PAK (TO-263) | MOSFET 650V Vds 30V Vgs D2PAK (TO-263) |
Manufacturer | Vishay | Vishay | Vishay |
Product Category | MOSFET | MOSFET | MOSFET |
RoHS | Y | Y | Y |
Technology | Si | Si | Si |
Mounting Style | SMD/SMT | - | SMD/SMT |
Package / Case | TO-263-3 | - | TO-263-3 |
Number of Channels | 1 Channel | - | - |
Transistor Polarity | N-Channel | - | - |
Vds Drain Source Breakdown Voltage | 550 V | - | - |
Id Continuous Drain Current | 19 A | - | - |
Rds On Drain Source Resistance | 184 mOhms | - | - |
Vgs th Gate Source Threshold Voltage | 4 V | - | - |
Vgs Gate Source Voltage | 30 V | - | - |
Qg Gate Charge | 46 nC | - | - |
Minimum Operating Temperature | - 55 C | - | - |
Maximum Operating Temperature | + 150 C | - | - |
Pd Power Dissipation | 179 W | - | - |
Configuration | Single | - | - |
Channel Mode | Enhancement | - | - |
Packaging | Bulk | Reel | Tube |
Height | 4.83 mm | - | 4.83 mm |
Length | 10.67 mm | - | 10.67 mm |
Series | E | EF | EF |
Width | 9.65 mm | - | 9.65 mm |
Brand | Vishay / Siliconix | Vishay / Siliconix | Vishay / Siliconix |
Fall Time | 25 ns | - | - |
Product Type | MOSFET | MOSFET | MOSFET |
Rise Time | 27 ns | - | - |
Factory Pack Quantity | 1000 | 1000 | 50 |
Subcategory | MOSFETs | MOSFETs | MOSFETs |
Typical Turn Off Delay Time | 48 ns | - | - |
Typical Turn On Delay Time | 17 ns | - | - |
Unit Weight | 0.050717 oz | 0.050717 oz | 0.079014 oz |