 |  | | |
| PartNumber | SIHD240N60E-GE3 | SIHD2N80E-GE3 | SIHD2N80AE-GE3 |
| Description | MOSFET 600V Vds; +/-30V Vgs DPAK (TO-252) | MOSFET 800V Vds 30V Vgs DPAK (TO-252) | MOSFET Nch 800V Vds 30V Vgs TO-252 (DPAK) |
| Manufacturer | Vishay | Vishay | Vishay |
| Product Category | MOSFET | MOSFET | MOSFET |
| RoHS | Y | Y | Y |
| Technology | Si | Si | Si |
| Mounting Style | SMD/SMT | SMD/SMT | SMD/SMT |
| Package / Case | TO-252-3 | TO-252-3 | TO-252 |
| Number of Channels | 1 Channel | 1 Channel | 1 Channel |
| Transistor Polarity | N-Channel | N-Channel | N-Channel |
| Vds Drain Source Breakdown Voltage | 600 V | 800 V | 800 V |
| Id Continuous Drain Current | 12 A | 2.8 A | 2.9 A |
| Rds On Drain Source Resistance | 240 mOhms | 2.38 Ohms | 2.5 Ohms |
| Vgs th Gate Source Threshold Voltage | 3 V | 4 V | 4 V |
| Vgs Gate Source Voltage | 30 V | 10 V | 30 V |
| Qg Gate Charge | 23 nC | 9.8 nC | 7 nC |
| Minimum Operating Temperature | - 55 C | - 55 C | - 55 C |
| Maximum Operating Temperature | + 150 C | + 150 C | + 150 C |
| Pd Power Dissipation | 78 W | 62.5 W | - |
| Configuration | Single | Single | Single |
| Channel Mode | Enhancement | Enhancement | Enhancement |
| Packaging | Reel | Reel | Tube |
| Series | E | E | E |
| Transistor Type | 1 N-Channel | 1 N-Channel | - |
| Brand | Vishay / Siliconix | Vishay / Siliconix | Vishay / Siliconix |
| Forward Transconductance Min | 4 S | - | - |
| Fall Time | 14 ns | 27 ns | 23 ns |
| Product Type | MOSFET | MOSFET | MOSFET |
| Rise Time | 14 ns | 7 ns | 8 ns |
| Factory Pack Quantity | 2000 | 3000 | 50 |
| Subcategory | MOSFETs | MOSFETs | MOSFETs |
| Typical Turn Off Delay Time | 26 ns | 19 ns | 10 ns |
| Typical Turn On Delay Time | 15 ns | 11 ns | 13 ns |
| Unit Weight | - | 0.011993 oz | - |