SIHF12N50C-E3 vs SIHF12N60E-E3 vs SIHF12N60E

 
PartNumberSIHF12N50C-E3SIHF12N60E-E3SIHF12N60E
DescriptionMOSFET N-Channel 500VMOSFET 600V Vds 30V Vgs TO-220 FULLPAK
ManufacturerVishayVishay-
Product CategoryMOSFETMOSFET-
RoHSYY-
TechnologySiSi-
Mounting StyleThrough HoleThrough Hole-
Package / CaseTO-220FP-3TO-220FP-3-
Number of Channels1 Channel1 Channel-
Transistor PolarityN-ChannelN-Channel-
Vds Drain Source Breakdown Voltage560 V600 V-
Id Continuous Drain Current12 A12 A-
Rds On Drain Source Resistance555 mOhms380 mOhms-
Vgs th Gate Source Threshold Voltage5 V4 V-
Vgs Gate Source Voltage30 V30 V-
Qg Gate Charge32 nC29 nC-
Minimum Operating Temperature- 55 C- 55 C-
Maximum Operating Temperature+ 150 C+ 150 C-
Pd Power Dissipation36 W33 W-
ConfigurationSingleSingle-
Channel ModeEnhancementEnhancement-
PackagingTubeTube-
Height15.49 mm15.49 mm-
Length10.41 mm10.41 mm-
Width4.7 mm4.7 mm-
BrandVishay / SiliconixVishay / Siliconix-
Fall Time6 ns19 ns-
Product TypeMOSFETMOSFET-
Rise Time35 ns19 ns-
Factory Pack Quantity5050-
SubcategoryMOSFETsMOSFETs-
Typical Turn Off Delay Time23 ns35 ns-
Typical Turn On Delay Time18 ns14 ns-
Unit Weight0.211644 oz0.211644 oz-
Series-E-
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