SIHF12N60E-E3 vs SIHF12N60E-GE3 vs SIHF12N60E

 
PartNumberSIHF12N60E-E3SIHF12N60E-GE3SIHF12N60E
DescriptionMOSFET 600V Vds 30V Vgs TO-220 FULLPAKMOSFET 600V Vds 30V Vgs TO-220 FULLPAK
ManufacturerVishayVishay-
Product CategoryMOSFETMOSFET-
RoHSYY-
TechnologySiSi-
Mounting StyleThrough HoleThrough Hole-
Package / CaseTO-220FP-3TO-220FP-3-
Number of Channels1 Channel1 Channel-
Transistor PolarityN-ChannelN-Channel-
Vds Drain Source Breakdown Voltage600 V600 V-
Id Continuous Drain Current12 A12 A-
Rds On Drain Source Resistance380 mOhms380 mOhms-
Vgs th Gate Source Threshold Voltage4 V4 V-
Vgs Gate Source Voltage30 V30 V-
Qg Gate Charge29 nC29 nC-
Minimum Operating Temperature- 55 C- 55 C-
Maximum Operating Temperature+ 150 C+ 150 C-
Pd Power Dissipation33 W33 W-
ConfigurationSingleSingle-
Channel ModeEnhancementEnhancement-
PackagingTubeTube-
Height15.49 mm--
Length10.41 mm--
SeriesEE-
Width4.7 mm--
BrandVishay / SiliconixVishay / Siliconix-
Fall Time19 ns19 ns-
Product TypeMOSFETMOSFET-
Rise Time19 ns19 ns-
Factory Pack Quantity5050-
SubcategoryMOSFETsMOSFETs-
Typical Turn Off Delay Time35 ns35 ns-
Typical Turn On Delay Time14 ns14 ns-
Unit Weight0.211644 oz0.211644 oz-
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