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| PartNumber | SIHF22N60E-GE3 | SIHF22N60E-E3 | SIHF22N60E |
| Description | MOSFET 600V Vds 30V Vgs TO-220 FULLPAK | MOSFET RECOMMENDED ALT 781-SIR462DP-T1-GE3 | Power Field-Effect Transistor, 21A I(D), 600V, 0.18ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB |
| Manufacturer | Vishay | Vishay | VISHAY |
| Product Category | MOSFET | MOSFET | IC Chips |
| RoHS | Y | Y | - |
| Technology | Si | Si | Si |
| Mounting Style | Through Hole | Through Hole | Through Hole |
| Package / Case | TO-220FP-3 | TO-220FP-3 | - |
| Number of Channels | 1 Channel | 1 Channel | 1 Channel |
| Transistor Polarity | N-Channel | N-Channel | N-Channel |
| Vds Drain Source Breakdown Voltage | 600 V | 600 V | - |
| Id Continuous Drain Current | 21 A | 21 A | - |
| Rds On Drain Source Resistance | 180 mOhms | 180 mOhms | - |
| Vgs th Gate Source Threshold Voltage | 4 V | 4 V | - |
| Vgs Gate Source Voltage | 30 V | 30 V | - |
| Qg Gate Charge | 57 nC | 57 nC | - |
| Minimum Operating Temperature | - 55 C | - 55 C | - 55 C |
| Maximum Operating Temperature | + 150 C | + 150 C | + 150 C |
| Pd Power Dissipation | 35 W | 35 W | - |
| Configuration | Single | Single | Single |
| Channel Mode | Enhancement | Enhancement | - |
| Packaging | Tube | Tube | Tube |
| Series | E | E | E |
| Brand | Vishay / Siliconix | Vishay / Siliconix | - |
| Fall Time | 35 ns | 35 ns | - |
| Product Type | MOSFET | MOSFET | - |
| Rise Time | 27 ns | 27 ns | - |
| Factory Pack Quantity | 50 | 50 | - |
| Subcategory | MOSFETs | MOSFETs | - |
| Typical Turn Off Delay Time | 66 ns | 66 ns | - |
| Typical Turn On Delay Time | 18 ns | 18 ns | - |
| Unit Weight | 0.211644 oz | 0.211644 oz | 0.211644 oz |
| Tradename | - | - | E Series |
| Package Case | - | - | TO-220-3 |
| Transistor Type | - | - | 1 N-Channel |
| Pd Power Dissipation | - | - | 227 W |
| Vgs Gate Source Voltage | - | - | 20 V |
| Id Continuous Drain Current | - | - | 21 A |
| Vds Drain Source Breakdown Voltage | - | - | 600 V |
| Rds On Drain Source Resistance | - | - | 180 mOhms |
| Qg Gate Charge | - | - | 57 nC |
| Forward Transconductance Min | - | - | 6.4 S |