SIHF30N60E-GE3 vs SIHF30N60E-E3 vs SIHF35N60E-GE3

 
PartNumberSIHF30N60E-GE3SIHF30N60E-E3SIHF35N60E-GE3
DescriptionMOSFET 600V Vds 30V Vgs TO-220 FULLPAKMOSFET 600V Vds 30V Vgs TO-220 FULLPAKPower MOSFET
ManufacturerVishayVishay-
Product CategoryMOSFETMOSFET-
RoHSYY-
TechnologySiSi-
Mounting StyleThrough HoleThrough Hole-
Package / CaseTO-220FP-3TO-220FP-3-
Number of Channels1 Channel1 Channel-
Transistor PolarityN-ChannelN-Channel-
Vds Drain Source Breakdown Voltage600 V600 V-
Id Continuous Drain Current29 A29 A-
Rds On Drain Source Resistance125 mOhms125 mOhms-
Vgs th Gate Source Threshold Voltage2.8 V2.8 V-
Vgs Gate Source Voltage30 V30 V-
Qg Gate Charge85 nC85 nC-
Minimum Operating Temperature- 55 C- 55 C-
Maximum Operating Temperature+ 150 C+ 150 C-
Pd Power Dissipation37 W37 W-
ConfigurationSingleSingle-
Channel ModeEnhancementEnhancement-
PackagingTubeTube-
Height15.49 mm15.49 mm-
Length10.41 mm10.41 mm-
SeriesEE-
Width4.7 mm4.7 mm-
BrandVishay / SiliconixVishay / Siliconix-
Fall Time36 ns36 ns-
Product TypeMOSFETMOSFET-
Rise Time32 ns32 ns-
Factory Pack Quantity5050-
SubcategoryMOSFETsMOSFETs-
Typical Turn Off Delay Time63 ns63 ns-
Typical Turn On Delay Time19 ns19 ns-
Unit Weight0.211644 oz0.211644 oz-
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