SIHF8N50D-E3 vs SIHF8N50L vs SIHF8N50L-E

 
PartNumberSIHF8N50D-E3SIHF8N50LSIHF8N50L-E
DescriptionMOSFET 500V Vds 30V Vgs TO-220 FULLPAK
ManufacturerVishay--
Product CategoryMOSFET--
RoHSY--
TechnologySi--
Mounting StyleThrough Hole--
Package / CaseTO-220FP-3--
Number of Channels1 Channel--
Transistor PolarityN-Channel--
Vds Drain Source Breakdown Voltage500 V--
Id Continuous Drain Current8.7 A--
Rds On Drain Source Resistance850 mOhms--
Vgs th Gate Source Threshold Voltage5 V--
Vgs Gate Source Voltage30 V--
Qg Gate Charge15 nC--
Minimum Operating Temperature- 55 C--
Maximum Operating Temperature+ 150 C--
Pd Power Dissipation33 W--
ConfigurationSingle--
Channel ModeEnhancement--
PackagingTube--
SeriesD--
BrandVishay / Siliconix--
Fall Time11 ns--
Product TypeMOSFET--
Rise Time16 ns--
Factory Pack Quantity50--
SubcategoryMOSFETs--
Typical Turn Off Delay Time17 ns--
Typical Turn On Delay Time13 ns--
Unit Weight0.211644 oz--
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