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| PartNumber | SIHF9520S-GE3 | SIHF9540S-GE3 | SIHF9540PBF |
| Description | MOSFET 100V Vds 20V Vgs D2PAK (TO-263) | MOSFET 100V Vds 20V Vgs D2PAK (TO-263) | MOSFET -100V Vds +/-20V Vgs Rds(on) 0.20 @-10V |
| Manufacturer | Vishay | Vishay | Vishay |
| Product Category | MOSFET | MOSFET | MOSFET |
| RoHS | Y | Y | Y |
| Technology | Si | Si | - |
| Mounting Style | SMD/SMT | SMD/SMT | - |
| Package / Case | TO-263-3 | TO-263-3 | - |
| Number of Channels | 1 Channel | 1 Channel | - |
| Transistor Polarity | P-Channel | P-Channel | - |
| Vds Drain Source Breakdown Voltage | 100 V | 100 V | - |
| Id Continuous Drain Current | 6.8 A | 19 A | - |
| Rds On Drain Source Resistance | 600 mOhms | 200 mOhms | - |
| Vgs th Gate Source Threshold Voltage | - 4 V | - 4 V | - |
| Vgs Gate Source Voltage | 20 V | 20 V | - |
| Qg Gate Charge | 18 nC | 61 nC | - |
| Minimum Operating Temperature | - 55 C | - 55 C | - |
| Maximum Operating Temperature | + 175 C | + 175 C | - |
| Pd Power Dissipation | 60 W | 150 W | - |
| Configuration | Single | Single | - |
| Channel Mode | Enhancement | Enhancement | - |
| Height | 4.83 mm | - | - |
| Length | 10.67 mm | - | - |
| Series | SIH | SIH | - |
| Transistor Type | 1 P-Channel | 1 P-Channel | - |
| Width | 9.65 mm | - | - |
| Brand | Vishay / Siliconix | Vishay / Siliconix | Vishay / Siliconix |
| Forward Transconductance Min | 2 S | 6.2 S | - |
| Fall Time | 25 ns | 57 ns | - |
| Product Type | MOSFET | MOSFET | MOSFET |
| Rise Time | 29 ns | 73 ns | - |
| Factory Pack Quantity | 1 | 1 | - |
| Subcategory | MOSFETs | MOSFETs | MOSFETs |
| Typical Turn Off Delay Time | 21 ns | 34 ns | - |
| Typical Turn On Delay Time | 29 ns | 16 ns | - |