PartNumber | SIHFR220-GE3 | SIHFR220 | SIHFR224 |
Description | MOSFET 200V Vds 20V Vgs DPAK (TO-252) | ||
Manufacturer | Vishay | - | - |
Product Category | MOSFET | - | - |
RoHS | Y | - | - |
Technology | Si | - | - |
Mounting Style | SMD/SMT | - | - |
Package / Case | TO-252-3 | - | - |
Number of Channels | 1 Channel | - | - |
Transistor Polarity | N-Channel | - | - |
Vds Drain Source Breakdown Voltage | 200 V | - | - |
Id Continuous Drain Current | 4.8 A | - | - |
Rds On Drain Source Resistance | 800 mOhms | - | - |
Vgs th Gate Source Threshold Voltage | 2 V | - | - |
Vgs Gate Source Voltage | 20 V | - | - |
Qg Gate Charge | 14 nC | - | - |
Minimum Operating Temperature | - 55 C | - | - |
Maximum Operating Temperature | + 150 C | - | - |
Pd Power Dissipation | 42 W | - | - |
Configuration | Single | - | - |
Channel Mode | Enhancement | - | - |
Height | 2.38 mm | - | - |
Length | 6.73 mm | - | - |
Series | SIH | - | - |
Transistor Type | 1 N-Channel | - | - |
Width | 6.22 mm | - | - |
Brand | Vishay / Siliconix | - | - |
Forward Transconductance Min | 1.7 S | - | - |
Fall Time | 13 ns | - | - |
Product Type | MOSFET | - | - |
Rise Time | 22 ns | - | - |
Factory Pack Quantity | 1 | - | - |
Subcategory | MOSFETs | - | - |
Typical Turn Off Delay Time | 19 ns | - | - |
Typical Turn On Delay Time | 7.2 ns | - | - |