SIHFZ48RS-GE3 vs SIHFZ48 vs SIHFZ48RS

 
PartNumberSIHFZ48RS-GE3SIHFZ48SIHFZ48RS
DescriptionMOSFET 60V Vds 20V Vgs D2PAK (TO-263)
ManufacturerVishay--
Product CategoryMOSFET--
RoHSY--
TechnologySi--
Mounting StyleSMD/SMT--
Package / CaseTO-263-3--
Number of Channels1 Channel--
Transistor PolarityN-Channel--
Vds Drain Source Breakdown Voltage60 V--
Id Continuous Drain Current50 A--
Rds On Drain Source Resistance18 mOhms--
Vgs th Gate Source Threshold Voltage2 V--
Vgs Gate Source Voltage20 V--
Qg Gate Charge110 nC--
Minimum Operating Temperature- 55 C--
Maximum Operating Temperature+ 175 C--
Pd Power Dissipation190 W--
ConfigurationSingle--
Channel ModeEnhancement--
SeriesSIHFZ--
Transistor Type1 N-Channel--
BrandVishay / Siliconix--
Forward Transconductance Min27 S--
Fall Time250 ns--
Product TypeMOSFET--
Rise Time250 ns--
Factory Pack Quantity1--
SubcategoryMOSFETs--
Typical Turn Off Delay Time210 ns--
Typical Turn On Delay Time8.1 ns--
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