PartNumber | SIHG039N60EF-GE3 | SIHG039N60E-GE3 | SIHG018N60E-GE3 |
Description | MOSFET EF Series Power MOSFET With Fast Body Diode; 4th Gen E Series Technology | MOSFET 650V Vds; 30V Vgs TO-247AC | MOSFET 600V Vds 30V Vgs TO-247AC |
Manufacturer | Vishay | Vishay | Vishay |
Product Category | MOSFET | MOSFET | MOSFET |
RoHS | Y | Y | Y |
Technology | Si | Si | Si |
Mounting Style | Through Hole | Through Hole | Through Hole |
Package / Case | TO-247AC-3 | TO-247AC-3 | TO-247AC-3 |
Number of Channels | 1 Channel | 1 Channel | 1 Channel |
Transistor Polarity | N-Channel | N-Channel | N-Channel |
Vds Drain Source Breakdown Voltage | 600 V | 600 V | 600 V |
Id Continuous Drain Current | 61 A | 63 A | 99 A |
Rds On Drain Source Resistance | 40 mOhms | 39 mOhms | 23 mOhms |
Vgs th Gate Source Threshold Voltage | 3 V | 3 V | 3 V |
Vgs Gate Source Voltage | 30 V | 30 V | 30 V |
Qg Gate Charge | 84 nC | 126 nC | 228 nC |
Minimum Operating Temperature | - 55 C | - 55 C | - 55 C |
Maximum Operating Temperature | + 150 C | + 150 C | + 150 C |
Pd Power Dissipation | 357 W | 357 W | 524 W |
Configuration | Single | Single | Single |
Channel Mode | Enhancement | Enhancement | Enhancement |
Packaging | Tube | Tube | Tube |
Series | EF | E | E |
Transistor Type | 1 N-Channel | 1 N-Channel | 1 N-Channel |
Brand | Vishay / Siliconix | Vishay / Siliconix | Vishay / Siliconix |
Forward Transconductance Min | 18 S | 17 S | 25 S |
Fall Time | 78 ns | 94 ns | 84 ns |
Product Type | MOSFET | MOSFET | MOSFET |
Rise Time | 172 ns | 126 ns | 197 ns |
Factory Pack Quantity | 50 | 50 | 50 |
Subcategory | MOSFETs | MOSFETs | MOSFETs |
Typical Turn Off Delay Time | 152 ns | 176 ns | 177 ns |
Typical Turn On Delay Time | 109 ns | 79 ns | 132 ns |