SIHG14N50D-GE3 vs SIHG14N50D-E3 vs SIHG14N50D

 
PartNumberSIHG14N50D-GE3SIHG14N50D-E3SIHG14N50D
DescriptionMOSFET 500V Vds 30V Vgs TO-247ACMOSFET 500V Vds 30V Vgs TO-247AC
ManufacturerVishayVishay-
Product CategoryMOSFETMOSFET-
RoHSYY-
TechnologySiSi-
Mounting StyleThrough HoleThrough Hole-
Package / CaseTO-247AC-3TO-247AC-3-
Number of Channels1 Channel1 Channel-
Transistor PolarityN-ChannelN-Channel-
Vds Drain Source Breakdown Voltage500 V500 V-
Id Continuous Drain Current14 A14 A-
Rds On Drain Source Resistance400 mOhms400 mOhms-
Vgs th Gate Source Threshold Voltage5 V5 V-
Vgs Gate Source Voltage30 V30 V-
Qg Gate Charge29 nC29 nC-
Minimum Operating Temperature- 55 C- 55 C-
Maximum Operating Temperature+ 150 C+ 150 C-
Pd Power Dissipation208 W208 W-
ConfigurationSingleSingle-
PackagingReelTube-
SeriesDD-
BrandVishay / SiliconixVishay / Siliconix-
Product TypeMOSFETMOSFET-
Factory Pack Quantity500500-
SubcategoryMOSFETsMOSFETs-
Unit Weight1.340411 oz1.340411 oz-
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