PartNumber | SIHG21N60EF-GE3 | SIHG21N80AE-GE3 | SIHG21N65EF-GE3 |
Description | MOSFET 600V Vds 30V Vgs TO-247AC | MOSFET E Series Power MOSFET | MOSFET 650V Vds 30V Vgs TO-247AC |
Manufacturer | Vishay | Vishay | Vishay |
Product Category | MOSFET | MOSFET | MOSFET |
RoHS | Y | Y | Y |
Technology | Si | Si | Si |
Mounting Style | Through Hole | Through Hole | Through Hole |
Package / Case | TO-247AC-3 | TO-247-3 | TO-247AC-3 |
Packaging | Reel | Tube | Tube |
Height | 20.82 mm | - | 20.82 mm |
Length | 15.87 mm | - | 15.87 mm |
Series | EF | E | EF |
Width | 5.31 mm | - | 5.31 mm |
Brand | Vishay / Siliconix | Vishay / Siliconix | Vishay / Siliconix |
Product Type | MOSFET | MOSFET | MOSFET |
Factory Pack Quantity | 500 | 50 | 25 |
Subcategory | MOSFETs | MOSFETs | MOSFETs |
Number of Channels | - | 1 Channel | - |
Transistor Polarity | - | N-Channel | - |
Vds Drain Source Breakdown Voltage | - | 800 V | - |
Id Continuous Drain Current | - | 17.4 A | - |
Rds On Drain Source Resistance | - | 235 mOhms | - |
Vgs th Gate Source Threshold Voltage | - | 2 V | - |
Vgs Gate Source Voltage | - | 30 V | - |
Qg Gate Charge | - | 48 nC | - |
Minimum Operating Temperature | - | - 55 C | - |
Maximum Operating Temperature | - | + 150 C | - |
Pd Power Dissipation | - | 32 W | - |
Configuration | - | Single | - |
Channel Mode | - | Enhancement | - |
Transistor Type | - | 1 N-Channel | - |
Fall Time | - | 76 ns | - |
Rise Time | - | 38 ns | - |
Typical Turn Off Delay Time | - | 71 ns | - |
Typical Turn On Delay Time | - | 21 ns | - |