SIHG22N50D-E3 vs SIHG22N50D-GE3 vs SIHG22N50D

 
PartNumberSIHG22N50D-E3SIHG22N50D-GE3SIHG22N50D
DescriptionMOSFET 500V Vds 30V Vgs TO-247ACMOSFET 500V Vds 30V Vgs TO-247AC
ManufacturerVishayVishay-
Product CategoryMOSFETMOSFET-
RoHSYY-
TechnologySiSi-
Mounting StyleThrough HoleThrough Hole-
Package / CaseTO-247AC-3TO-247AC-3-
Number of Channels1 Channel1 Channel-
Transistor PolarityN-ChannelN-Channel-
Vds Drain Source Breakdown Voltage500 V500 V-
Id Continuous Drain Current22 A22 A-
Rds On Drain Source Resistance230 mOhms230 mOhms-
Vgs th Gate Source Threshold Voltage5 V5 V-
Vgs Gate Source Voltage30 V30 V-
Qg Gate Charge49 nC49 nC-
Minimum Operating Temperature- 55 C- 55 C-
Maximum Operating Temperature+ 150 C+ 150 C-
Pd Power Dissipation312 W312 W-
ConfigurationSingleSingle-
Channel ModeEnhancementEnhancement-
PackagingReelTube-
Height20.82 mm20.82 mm-
Length15.87 mm15.87 mm-
SeriesDD-
Width5.31 mm5.31 mm-
BrandVishay / SiliconixVishay / Siliconix-
Fall Time40 ns40 ns-
Product TypeMOSFETMOSFET-
Rise Time42 ns42 ns-
Factory Pack Quantity500500-
SubcategoryMOSFETsMOSFETs-
Typical Turn Off Delay Time47 ns47 ns-
Typical Turn On Delay Time21 ns21 ns-
Part # AliasesSIHG22N50D--
Unit Weight1.340411 oz1.340411 oz-
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