SIHG24N65E-E3 vs SIHG24N65E vs SIHG24N65E G24N65E

 
PartNumberSIHG24N65E-E3SIHG24N65ESIHG24N65E G24N65E
DescriptionMOSFET 650V Vds 30V Vgs TO-247AC
ManufacturerVishay--
Product CategoryMOSFET--
RoHSY--
TechnologySi--
Mounting StyleThrough Hole--
Package / CaseTO-247AC-3--
Number of Channels1 Channel--
Transistor PolarityN-Channel--
Vds Drain Source Breakdown Voltage650 V--
Id Continuous Drain Current24 A--
Rds On Drain Source Resistance145 mOhms--
Vgs th Gate Source Threshold Voltage4 V--
Vgs Gate Source Voltage30 V--
Qg Gate Charge81 nC--
Minimum Operating Temperature- 55 C--
Maximum Operating Temperature+ 150 C--
Pd Power Dissipation250 W--
ConfigurationSingle--
Channel ModeEnhancement--
PackagingTube--
Height20.82 mm--
Length15.87 mm--
SeriesE--
Width5.31 mm--
BrandVishay / Siliconix--
Fall Time69 ns--
Product TypeMOSFET--
Rise Time84 ns--
Factory Pack Quantity500--
SubcategoryMOSFETs--
Typical Turn Off Delay Time70 ns--
Typical Turn On Delay Time24 ns--
Unit Weight1.340411 oz--
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