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| PartNumber | SIHG25N40D-E3 | SIHG25N40D-GE3 | SIHG25N50E-GE3 |
| Description | MOSFET 400V Vds 30V Vgs TO-247AC | MOSFET 400V Vds 30V Vgs TO-247AC | MOSFET 500V Vds 30V Vgs TO-247AC |
| Manufacturer | Vishay | Vishay | Vishay |
| Product Category | MOSFET | MOSFET | MOSFET |
| RoHS | Y | Y | Y |
| Technology | Si | Si | Si |
| Mounting Style | Through Hole | Through Hole | Through Hole |
| Package / Case | TO-247AC-3 | TO-247AC-3 | TO-247AC-3 |
| Number of Channels | 1 Channel | 1 Channel | 1 Channel |
| Transistor Polarity | N-Channel | N-Channel | N-Channel |
| Vds Drain Source Breakdown Voltage | 500 V | 500 V | 500 V |
| Id Continuous Drain Current | 14 A | 14 A | 26 A |
| Rds On Drain Source Resistance | 400 mOhms | 400 mOhms | 145 mOhms |
| Vgs th Gate Source Threshold Voltage | 5 V | 5 V | 4 V |
| Vgs Gate Source Voltage | 30 V | 30 V | 30 V |
| Qg Gate Charge | 29 nC | 29 nC | 57 nC |
| Minimum Operating Temperature | - 55 C | - 55 C | - 55 C |
| Maximum Operating Temperature | + 150 C | + 150 C | + 150 C |
| Pd Power Dissipation | 208 W | 208 W | 250 W |
| Configuration | Single | Single | Single |
| Channel Mode | Enhancement | Enhancement | Enhancement |
| Packaging | Tube | Tube | Tube |
| Series | D | D | E |
| Brand | Vishay / Siliconix | Vishay / Siliconix | Vishay / Siliconix |
| Fall Time | 26 ns | 26 ns | 29 ns |
| Product Type | MOSFET | MOSFET | MOSFET |
| Rise Time | 27 ns | 27 ns | 36 ns |
| Factory Pack Quantity | 500 | 500 | 500 |
| Subcategory | MOSFETs | MOSFETs | MOSFETs |
| Typical Turn Off Delay Time | 29 ns | 29 ns | 57 ns |
| Typical Turn On Delay Time | 16 ns | 16 ns | 19 ns |
| Unit Weight | 1.340411 oz | 1.340411 oz | - |
| Height | - | 20.82 mm | - |
| Length | - | 15.87 mm | - |
| Width | - | 5.31 mm | - |