SIHG33N60E-E3 vs SIHG33N60E vs SIHG33N60E-G3

 
PartNumberSIHG33N60E-E3SIHG33N60ESIHG33N60E-G3
DescriptionMOSFET 600V Vds 30V Vgs TO-247AC
ManufacturerVishay--
Product CategoryMOSFET--
RoHSY--
TechnologySi--
Mounting StyleThrough Hole--
Package / CaseTO-247AC-3--
Number of Channels1 Channel--
Transistor PolarityN-Channel--
Vds Drain Source Breakdown Voltage600 V--
Id Continuous Drain Current33 A--
Rds On Drain Source Resistance98 mOhms--
Vgs th Gate Source Threshold Voltage4 V--
Vgs Gate Source Voltage30 V--
Qg Gate Charge103 nC--
Minimum Operating Temperature- 55 C--
Maximum Operating Temperature+ 150 C--
Pd Power Dissipation278 W--
ConfigurationSingle--
Channel ModeEnhancement--
PackagingReel--
Height20.82 mm--
Length15.87 mm--
SeriesE--
Width5.31 mm--
BrandVishay / Siliconix--
Fall Time48 ns--
Product TypeMOSFET--
Rise Time43 ns--
Factory Pack Quantity500--
SubcategoryMOSFETs--
Typical Turn Off Delay Time161 ns--
Typical Turn On Delay Time28 ns--
Part # AliasesSIHG33N60E--
Unit Weight1.340411 oz--
Top