SIHG47N60AEF-GE3 vs SIHG47N60AE-GE3 vs SIHG47N605

 
PartNumberSIHG47N60AEF-GE3SIHG47N60AE-GE3SIHG47N605
DescriptionMOSFET 600V Vds 30V Vgs TO-247ACMOSFET 600V Vds 30V Vgs TO-247AC
ManufacturerVishayVishay-
Product CategoryMOSFETMOSFET-
RoHSYY-
TechnologySiSi-
Mounting StyleThrough HoleThrough Hole-
Package / CaseTO-247AC-3TO-247AC-3-
Number of Channels1 Channel1 Channel-
Transistor PolarityN-ChannelN-Channel-
Vds Drain Source Breakdown Voltage600 V600 V-
Id Continuous Drain Current40 A43 A-
Rds On Drain Source Resistance70 mOhms56 mOhms-
Vgs th Gate Source Threshold Voltage2 V4 V-
Vgs Gate Source Voltage30 V30 V-
Qg Gate Charge189 nC121 nC-
Minimum Operating Temperature- 55 C- 55 C-
Maximum Operating Temperature+ 150 C+ 150 C-
Pd Power Dissipation313 W313 W-
ConfigurationSingleSingle-
Channel ModeEnhancementEnhancement-
SeriesEFE-
BrandVishay / SiliconixVishay / Siliconix-
Forward Transconductance Min13 S--
Fall Time67 ns63 ns-
Product TypeMOSFETMOSFET-
Rise Time63 ns90 ns-
SubcategoryMOSFETsMOSFETs-
Typical Turn Off Delay Time143 ns108 ns-
Typical Turn On Delay Time35 ns34 ns-
Packaging-Tube-
Factory Pack Quantity-500-
Unit Weight-0.211644 oz-
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