SIHG47N60E-GE3 vs SIHG47N60E-E3 vs SIHG47N60E

 
PartNumberSIHG47N60E-GE3SIHG47N60E-E3SIHG47N60E
DescriptionMOSFET 600V Vds 30V Vgs TO-247ACMOSFET 600V Vds 30V Vgs TO-247AC
ManufacturerVishayVishay-
Product CategoryMOSFETMOSFET-
RoHSYY-
TechnologySiSi-
Mounting StyleThrough HoleThrough Hole-
Package / CaseTO-247AC-3TO-247AC-3-
Number of Channels1 Channel1 Channel-
Transistor PolarityN-ChannelN-Channel-
Vds Drain Source Breakdown Voltage600 V600 V-
Id Continuous Drain Current47 A47 A-
Rds On Drain Source Resistance64 mOhms64 mOhms-
Vgs th Gate Source Threshold Voltage4 V4 V-
Vgs Gate Source Voltage30 V30 V-
Qg Gate Charge148 nC148 nC-
Minimum Operating Temperature- 55 C- 55 C-
Maximum Operating Temperature+ 150 C+ 150 C-
Pd Power Dissipation357 W357 W-
ConfigurationSingleSingle-
Channel ModeEnhancementEnhancement-
PackagingTubeTube-
SeriesEE-
BrandVishay / SiliconixVishay / Siliconix-
Fall Time82 ns82 ns-
Product TypeMOSFETMOSFET-
Rise Time72 ns72 ns-
Factory Pack Quantity500500-
SubcategoryMOSFETsMOSFETs-
Typical Turn Off Delay Time93 ns93 ns-
Typical Turn On Delay Time28 ns28 ns-
Unit Weight1.340411 oz1.340411 oz-
Height-20.82 mm-
Length-15.87 mm-
Width-5.31 mm-
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