SIHG47N60E-GE3 vs SIHG47N60E-GE3 G47N60E vs SIHG47N60E-GE3,SIHG47N60

 
PartNumberSIHG47N60E-GE3SIHG47N60E-GE3 G47N60ESIHG47N60E-GE3,SIHG47N60
DescriptionMOSFET 600V Vds 30V Vgs TO-247AC
ManufacturerVishay--
Product CategoryMOSFET--
RoHSY--
TechnologySi--
Mounting StyleThrough Hole--
Package / CaseTO-247AC-3--
Number of Channels1 Channel--
Transistor PolarityN-Channel--
Vds Drain Source Breakdown Voltage600 V--
Id Continuous Drain Current47 A--
Rds On Drain Source Resistance64 mOhms--
Vgs th Gate Source Threshold Voltage4 V--
Vgs Gate Source Voltage30 V--
Qg Gate Charge148 nC--
Minimum Operating Temperature- 55 C--
Maximum Operating Temperature+ 150 C--
Pd Power Dissipation357 W--
ConfigurationSingle--
Channel ModeEnhancement--
PackagingTube--
SeriesE--
BrandVishay / Siliconix--
Fall Time82 ns--
Product TypeMOSFET--
Rise Time72 ns--
Factory Pack Quantity500--
SubcategoryMOSFETs--
Typical Turn Off Delay Time93 ns--
Typical Turn On Delay Time28 ns--
Unit Weight1.340411 oz--
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