SIHG64N65E-GE3 vs SIHG61N65EF-GE3 vs SIHG68N60E

 
PartNumberSIHG64N65E-GE3SIHG61N65EF-GE3SIHG68N60E
DescriptionMOSFET 650V Vds 30V Vgs TO-247ACMOSFET 650V Vds 30V Vgs TO-247AC
ManufacturerVishayVishay-
Product CategoryMOSFETMOSFET-
RoHSYY-
TechnologySiSi-
Mounting StyleThrough HoleThrough Hole-
Package / CaseTO-247AC-3TO-247AC-3-
Number of Channels1 Channel--
Transistor PolarityN-Channel--
Vds Drain Source Breakdown Voltage650 V--
Id Continuous Drain Current64 A--
Rds On Drain Source Resistance47 mOhms--
Vgs th Gate Source Threshold Voltage4 V--
Vgs Gate Source Voltage30 V--
Qg Gate Charge239 nC--
Minimum Operating Temperature- 55 C--
Maximum Operating Temperature+ 150 C--
Pd Power Dissipation520 W--
ConfigurationSingle--
Channel ModeEnhancement--
SeriesESIH-
BrandVishay / SiliconixVishay / Siliconix-
Fall Time103 ns--
Product TypeMOSFETMOSFET-
Rise Time122 ns--
Factory Pack Quantity500500-
SubcategoryMOSFETsMOSFETs-
Typical Turn Off Delay Time213 ns--
Typical Turn On Delay Time66 ns--
Unit Weight0.211644 oz--
Packaging-Tube-
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