SIHG73N60E-GE3 vs SIHG73N60E-E3 vs SIHG73N60E

 
PartNumberSIHG73N60E-GE3SIHG73N60E-E3SIHG73N60E
DescriptionMOSFET 600V Vds 30V Vgs TO-247ACMOSFET 600V Vds 30V Vgs TO-247AC
ManufacturerVishayVishay-
Product CategoryMOSFETMOSFET-
RoHSYY-
TechnologySiSi-
Mounting StyleThrough HoleThrough Hole-
Package / CaseTO-247AC-3TO-247AC-3-
Number of Channels1 Channel1 Channel-
Transistor PolarityN-ChannelN-Channel-
Vds Drain Source Breakdown Voltage600 V600 V-
Id Continuous Drain Current73 A73 A-
Rds On Drain Source Resistance39 mOhms39 mOhms-
Vgs th Gate Source Threshold Voltage4 V4 V-
Vgs Gate Source Voltage30 V30 V-
Qg Gate Charge241 nC241 nC-
Minimum Operating Temperature- 55 C- 55 C-
Maximum Operating Temperature+ 150 C+ 150 C-
Pd Power Dissipation520 W520 W-
ConfigurationSingleSingle-
Channel ModeEnhancementEnhancement-
PackagingTubeBulk-
Height20.82 mm--
Length15.87 mm--
SeriesEE-
Width5.31 mm--
BrandVishay / SiliconixVishay / Siliconix-
Fall Time120 ns120 ns-
Product TypeMOSFETMOSFET-
Rise Time105 ns105 ns-
Factory Pack Quantity500500-
SubcategoryMOSFETsMOSFETs-
Typical Turn Off Delay Time290 ns290 ns-
Typical Turn On Delay Time63 ns63 ns-
Unit Weight1.340411 oz1.340411 oz-
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