SIHH11N60E-T1-GE3 vs SIHH11N60EF-T1-GE3 vs SIHH11N65E

 
PartNumberSIHH11N60E-T1-GE3SIHH11N60EF-T1-GE3SIHH11N65E
DescriptionMOSFET 600V Vds 30V Vgs PowerPAK 8 x 8MOSFET 600V Vds 30V Vgs PowerPAK 8 x 8
ManufacturerVishayVishay-
Product CategoryMOSFETMOSFET-
RoHSYY-
TechnologySiSi-
Mounting StyleSMD/SMTSMD/SMT-
Package / CasePowerPAK-8x8-4PowerPAK-8x8-4-
Number of Channels1 Channel--
Transistor PolarityN-Channel--
Vds Drain Source Breakdown Voltage600 V--
Id Continuous Drain Current11 A--
Rds On Drain Source Resistance295 mOhms--
Vgs th Gate Source Threshold Voltage4 V--
Vgs Gate Source Voltage30 V--
Qg Gate Charge31 nC--
Minimum Operating Temperature- 55 C--
Maximum Operating Temperature+ 150 C--
Pd Power Dissipation114 W--
ConfigurationSingle--
Channel ModeEnhancement--
PackagingReelReel-
Height1 mm1 mm-
Length8 mm8 mm-
SeriesEEF-
Width8 mm8 mm-
BrandVishay / SiliconixVishay / Siliconix-
Fall Time21 ns--
Product TypeMOSFETMOSFET-
Rise Time21 ns--
Factory Pack Quantity30003000-
SubcategoryMOSFETsMOSFETs-
Typical Turn Off Delay Time39 ns--
Typical Turn On Delay Time16 ns--
Unit Weight-0.001764 oz-
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